Fundamentals of Modern VLSI Devices

Fundamentals of Modern VLSI Devices

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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.4.10 In a shortchannel device or in a nonuniformly doped (laterally) MOSFET, Iˆ s may varyalong the channel length direction from the source to drain. Generalize the expression in ... Express the answers in eV. 4.12 For an nMOSFET with toxanbsp;...

Title:Fundamentals of Modern VLSI Devices
Author: Yuan Taur, Tak H. Ning
Publisher:Cambridge University Press - 2009-08-06

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